Jonathan serves as Deputy Director of the Quantum Economic Development Consortium, QED‑C. In his career in academia, industry, and government, he has developed strategy, exercised oversight, and implemented advanced R&D programs and international research partnerships. Jonathan earned a Ph.D. in Electrical Engineering with a concentration in microelectronics and a minor in Science & Technology Studies. He also completed a fellowship exploring frontiers in fundamental research and discovery. He is dedicated to furthering the development and adoption of emerging technologies in order to address national and global issues. Read more or reach out on LinkedIn.
While browsing the publications and photographs below, listen to his performance of the Brahms Clarinet Quintet.
G.D. Via, J.G. Felbinger, J. Blevins, K. Chabak, G. Jessen, J. Gillespie, R. Fitch, A. Crespo, K. Sutherlin, B. Poling, S. Tetlak, R. Gilbert, T. Cooper, R. Baranyai, J.W. Pomeroy, M. Kuball, J.J. Maurer and A. Bar-Cohen, “Wafer-scale GaN HEMT Performance Enhancement by Diamond Substrate Integration,” Physica Status Solidi (c), vol. 11, no. 3–4, pp. 871–874, Apr. 2014.
J.G. Felbinger, M. Fagerlind, O. Axelsson, N. Rorsman, X. Gao, S. Guo, W.J. Schaff and L.F. Eastman, “Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs,” IEEE Electron Device Letters, vol. 32, no. 7, pp. 889–891, July 2011.
J.G. Felbinger and J. Reppy, “Classifying Knowledge, Creating Secrets: Government Policy for Dual-Use Technology,” in Research in Social Problems and Public Policy: Government Secrecy, vol. 19, S.L. Maret, Ed., Bingley: Emerald, pp. 277–299, 2011.
Q. Diduck, J.G. Felbinger, L.F. Eastman, D. Francis, J. Wasserbauer, F. Faili, D.I. Babić and F. Ejeckam, “Frequency Performance Enhancement of AlGaN/GaN HEMTs on Diamond,” Electronics Letters, vol.45, no.14, pp. 758–759, July 2009.
J.G. Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman, J. Wasserbauer, F. Faili, D. Babić, D. Francis and F. Ejeckam, “Comparison of GaN HEMTs on Diamond and SiC Substrates,” IEEE Electron Device Letters, vol. 28, no. 11, pp. 948–950, Nov. 2007.
Quantum Economic Development Consortium (QED‑C), A Guide to a Quantum-Safe Organization: Transitioning from Today’s Cybersecurity to a Quantum-Resilient Environment, Arlington, VA, Dec. 6, 2021.
U.S. Government Accountability Office (GAO), Electricity Grid Cybersecurity: DOE Needs to Ensure Its Plans Fully Address Risks to Distribution Systems, Washington, DC, GAO-21-81, Mar. 18, 2021
GAO, 5G Wireless: Capabilities and Challenges for an Evolving Network, Washington, DC, Technology Assessment GAO-21-26SP, Nov. 24, 2020.
GAO, Defense Science and Technology: Opportunities to Better Integrate Industry Independent Research and Development (IR&D) into DOD Planning, Washington, DC, GAO-20-578, Sept. 3, 2020.
GAO, 5G Deployment: FCC Needs Comprehensive Strategic Planning to Guide Its Efforts, Washington, DC, GAO-20-468, June 12, 2020.
GAO, Nuclear Weapons: NNSA Needs to Incorporate Additional Management Controls Over Its Microelectronics Activities, Washington, DC, GAO-20-357, June 9, 2020.
GAO, “What is 5G? A GAO Science and Technology Explainer,” YouTube video, 3:32, Mar. 18, 2020.
GAO, Unmanned Aircraft Systems: FAA Could Better Leverage Test Site Program to Advance Drone Integration, Washington, DC, GAO-20-97, Jan. 9, 2020.
GAO, Satellite Communications: DOD Should Develop a Plan for Implementing Its Recommendations on a Future Wideband Architecture, Washington, DC, GAO-20-80, Dec. 19, 2019.
GAO, Aviation Security: TSA Should Ensure Screening Technologies Continue to Meet Detection Requirements after Deployment, Washington, DC, GAO-20-56, Dec. 5, 2019.
GAO, Surface Transportation: DHS Is Developing and Testing Security Technologies, but Could Better Share Test Results, Washington, DC, GAO-19-636, Sept. 12, 2019.
GAO, Critical Infrastructure Protection: Actions Needed to Address Significant Cybersecurity Risks Facing the Electric Grid, Washington, DC, GAO-19-332, Aug. 26, 2019.
GAO, Missile Defense: Delivery Delays Provide Opportunity for Increased Testing to Better Understand Capability, Washington, DC, GAO-19-387, June 6, 2019.
GAO, Workforce Automation: Better Data Needed to Assess and Plan for Effects of Advanced Technologies on Jobs, Washington, DC, GAO-19-257, Mar. 7, 2019.
GAO, Critical Infrastructure Protection: Protecting the Electric Grid from Geomagnetic Disturbances, Washington, DC, Technology Assessment GAO-19-98, Dec. 19, 2018.
GAO, Military Space Systems: DoD’s Use of Commercial Satellites to Host Defense Payloads Would Benefit from Centralizing Data, Washington, DC, GAO-18-493, Jul. 30, 2018.
GAO, Artificial Intelligence: Emerging Opportunities, Challenges, and Implications, Washington, DC, Technology Assessment GAO-18-142SP, Mar. 28, 2018.
GAO, Critical Infrastructure Protection: Electricity Suppliers Have Taken Actions to Address Electromagnetic Risks, and Additional Research Is Ongoing, Washington, DC, GAO-18-67, Feb. 7, 2018.
GAO, Defense Microelectronics: Efforts Ongoing to Increase Trusted Sources, but a National Strategy is Needed to Strengthen the Industrial Base, Washington, DC, GAO-18-43SU, Oct. 26, 2017.
A. Bar‐Cohen, J.G. Felbinger, and A. Sivananthan, DoD Power Beaming Roundtable Report, Defense Advanced Research Projects Agency (DARPA), Arlington, VA, Dec. 2015.
M. Sandrock, A. Javier, C. Konek, Z. Majumdar, P. Neskovic, J. Felbinger, C. Nehl, R. Lepkowicz, R. Willis, G. Zuccarello, G. Serpa, and P. Chang, Advanced Imaging Technologies for Checkpoints, Booz Allen Hamilton, Arlington, VA, Sept. 2012.
J.G. Felbinger and J.V. Reppy, “The Changing Landscape of Knowledge Production: Problems for Export Control,” Workshop on Regulating Knowledge Flows in the Global Age, Georgetown University, Washington, DC, 8–10 Nov. 2017.
J. Felbinger, “Preface,” Lester Eastman Conference on High Performance Devices, Bethlehem, PA, pp. xi–xii, 4–6 Aug. 2016. Publication Chair.
F. Ejeckam, D. Francis, F. Faili, D.I. Babić , J.G. Felbinger, D.J. Twitchen, and B. Bolliger, “GaN-on-Diamond: A Brief History,” Lester Eastman Conference on High Performance Devices, Ithaca, NY, pp. S2-T1-1–5, 5–7 Aug. 2014.
J.G. Felbinger, G.D. Via, J. Blevins, K. Chabak, G. Jessen, J. Gillespie, R. Fitch, A. Crespo, K. Sutherlin, B. Poling, S. Tetlak, R. Gilbert, T. Cooper, R. Baranyai, J.W. Pomeroy, M. Kuball, J.J. Maurer and A. Bar-Cohen, “Wafer-Scale GaN HEMT Performance Enhancement by Epitaxial Transfer onto Diamond,” 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, pp. 254–255, 25–30 Aug. 2013.
A. Bar-Cohen, J.J. Maurer and J.G. Felbinger, “DARPA’s Intra/Interchip Embedded Cooling (ICECool) Program,” International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), New Orleans, LA, pp. 171–174, 13–16 May 2013.
H. Zirath, L. Szhau, D. Kuylenstiema, J.G. Felbinger and K. Andersson, “An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator,” IEEE Compound Semiconductor IC Symposium (CSICS), Waikoloa Village, HI, 16–19 Oct. 2011.
J.G. Felbinger, M. Fagerlind, O. Axelsson, N. Rorsman, K. Andersson, X. Gao, S. Guo, W.J. Schaff and L.F. Eastman, “Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs for Microwave Applications,” 35th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Catania, Italy, pp. 41–42, 29 May–1 June 2011.
P. Chehrenegar, O. Axelsson, J. Grahn, N. Rorsman, J.G. Felbinger and K. Andersson, “Design and Characterization of a Highly Linear 3 GHz GaN HEMT Amplifier,” Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Vienna, Austria, 18–19 Apr. 2011.
D.I. Babić, Q. Diduck, P. Yenigalla, A. Schreiber, D. Francis, F. Faili, F. Ejeckam, J.G. Felbinger and L.F. Eastman, “GaN-on-diamond Field-Effect Transistors: from Wafers to Amplifier Modules,” 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, Croatia, pp. 597:1–7, 24–28 May 2010. Exceptional Outstanding Paper Award.
J.G. Felbinger, D.Q. Hao, W.J. Schaff, L.F. Eastman, X. Gao and S. Guo “AlInN/AlN/GaN-on-SiC Microwave HEMTs,” 34th WOCSDICE, Seeheim, Germany, pp. 25–26, 17–19 May 2010.
J.G. Felbinger, L.F. Eastman, J. Wasserbauer, F. Faili, D.I. Babić, D. Francis and F. Ejeckam, “AlGaN/GaN-on-Diamond HEMT Recent Progress,” 33rd WOCSDICE, Málaga, Spain, pp. 22–24, 17–20 May 2009.
J.G. Felbinger, M.V.S. Chandra, L.F. Eastman and R. Quay, “AlGaN/GaN HEMTs on SI-GaN Substrates up to Ka-Band Frequencies,” 32nd WOCSDICE, IMEC, Leuven, Belgium, pp. 95–96, 18–21 May 2008.
J.G. Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman, J. Wasserbauer, F. Faili, D. Babić, D. Francis and F. Ejeckam “Comparison of GaN HEMTs on Diamond and SiC Substrates,” 31st WOCSDICE, Venice, Italy, pp. 43–45, 20–23 May 2007. Best Student Paper Award.
J.G. Felbinger, “Fundamental Research at DoD,” 51st Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), Isle of Palms, SC, 16–19 Feb. 2015.
J.G. Felbinger, “DoD Basic Research Office: Strategic Outlook and Funding Opportunities,” 50th WOCSEMMAD, San Antonio, TX, 16–19 Feb. 2014.
J.G. Felbinger, J.J. Maurer and A. Bar-Cohen, “On-Chip Thermal Management for Compound Semiconductors,” 49th WOCSEMMAD, New Orleans, LA, 17–20 Feb. 2013.
A. Bar-Cohen and J. G. Felbinger, “Advanced Thermal Management for Wide Bandgap Devices and Circuits,” IEEE CSICS, La Jolla, CA, 14–17 Oct. 2012. IEEE Short Course.
J.G. Felbinger, M. Fagerlind, O. Axelsson, N. Rorsman, X. Gao, S. Guo, W.J. Schaff and L.F. Eastman, “Thin-Barrier AlGaN/GaN HEMTs,” 47th WOCSEMMAD, Savannah, GA, 20–23 Feb. 2011.
J.G. Felbinger, D.Q. Hao, W.J. Schaff, L.F. Eastman, X. Gao and S. Guo, “AlInN/AlN/GaN-on-SiC HEMTs,” Lester Eastman Conference on High Performance Devices, Troy, NY, 3–5 Aug. 2010.
J.G. Felbinger, W.J. Schaff and L.F. Eastman, “AlInN/GaN-on-SiC HEMTs,” 46th WOCSEMMAD, Newport Beach, CA, 14–17 Feb. 2010.
Q. Diduck, D. I. Babić, J.G. Felbinger, D. Francis, L.F. Eastman and F. Ejeckam, “GaN-on-Diamond HEMT Developments,” 46th WOCSEMMAD, Newport Beach, CA, 14–17 Feb. 2010.
J.G. Felbinger, J. Shi and L.F. Eastman, “GaN Transistors for Switching and High-Frequency Applications,” Lockheed Martin Nanotechnology Workshop, Ithaca, NY, 5 Aug. 2009.
J.G. Felbinger, L.F. Eastman, D. Francis, J. Wasserbauer, F. Faili and F. Ejeckam, “AlGaN/GaN-on-Diamond HEMTs,” 45th WOCSEMMAD, Ft. Myers, FL, 15–18 Feb. 2009.
J.G. Felbinger and L.F. Eastman, “GaN-on-GaN HEMTs,” 44th WOCSEMMAD, Palm Springs, CA, 17–20 Feb. 2008.
J.G. Felbinger, M.V.S. Chandra, L.F. Eastman, J. Wasserbauer, F. Faili, D. Babić, D. Francis and F. Ejeckam, “GaN-on-Diamond High-Electron-Mobility Transistors,” 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, 17–21 Sept. 2007.
J.G. Felbinger, M.V.S. Chandra, Y. Sun and L.F. Eastman, “Fabrication and Characterization of GaN-on-Diamond HEMTs,” 43rd WOCSEMMAD, Savannah, GA, 18–21 Feb. 2007.
“Global Water Girls, LLC” in “From trash to treasure: Ocean plastic waste source of alternative energy,” World Water, vol. 41, no. 2, p. 16. Water Environment Federation, Alexandria, VA, March/April 2018.
“Ithaca Area Water Resource Recovery Facility” and “View of Ithaca, NY, from Cornell Campus” in Latin America & Caribbean Energy Management: Case Study on Ithaca Area Wastewater Resource Recovery Facility, USA, Water Environment & Reuse Foundation and World Bank Group, Alexandria, VA, 2017.
